GeBi2Te4 is a topological insulator material with exciting electronic and quantum properties. Our GiBi2Te4 single crystals were synthesized using a flux growth method without any use of halide

Si(NiTe2)2 also known as SiNi2Te4 or Ni2SiTe4 is a layered semimetal with exciting magnetotransport and quantum properties. It crystallizes in monoclinic phase (P121/c1) wherein Ni 。

Nb2SiTe4 is a layered narrow gap semiconductor. It crystallizes in monoclinic phase (P121/c1) wherein Nb and Si cations are sandwiched between Te anion atoms forming the individual layers.

Bi1.5Sb0.5Te1.7Se1.3 or in shortly BSTS is a vdW topological material and vdW superconductor with exciting superconducting properties from bulk to monolayer scales.

HfTe5 is a member of layered transition metal pentatelluride material family. It crystallizes in orthorhombic phase and our crystals exhibit perfectly layered nature.

ZrGeTe4 crystal is a layered anisotropic semiconductor with the predicted bandgap of 0.4 eV. While it is layered and can be exfoliated down to few- and monolayers