More than a decade of growth optimization in chemical vapor transport (CVT) as well as flux growth lead to our flawless WS2 crystals.

Our single crystal GeS (Germanium sulfide) crystals come with guaranteed optical, electronic, and structural anisotropy. They are developed at our facilities using state-of-art flux zone techniques.

The only commercially available TlGaS2 vdW crystals have been synthesized at our facilities through float zone technique.

The only commercially available TlInS2 vdW crystals have been synthesized at our facilities through float zone technique.

Tin sulfooxide is a ternary alloy belonging to M2X3 family of materials. Our crystals has the chemical formula of Sb2S3xO3(1-x) where x composition ratio has been fixed to x=2/3.

Magnetic semiconductor MnPS3 has a monoclinic structure with the factor group C2h.